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Optically modulated high-sensitivity heterostructure varactor
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1860/1139
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| Title: | Optically modulated high-sensitivity heterostructure varactor |
| Authors: | Zhao, Xia
Cola, Adriano
Tersigni, Andrea
Quaranta, Fabio
Gallo, Eric
Spanier, Jonathan E.
Nabet, Bahram |
| Keywords: | Frequency Multiplier
Heterostructure-Barrier-Varactor (HBV)
Metal–Semiconductor–Metal (MSM)
Optical Modulation
Two-Dimensional-Hole-Gas (2-DHG) |
| Issue Date: | Sep-2006 |
| Publisher: | Institute of Electrical and Electronics Engineers |
| Citation: | IEEE Electron Device Letters, 27(9): pp. 710-712. |
| Abstract: | A novel optically modulated high-sensitivity heterostructure
varactor, demonstrated as a strong candidate for
high-order frequency-multiplier applications, is reported. The device
is a δ modulation-doped heterostructure of AlGaAs/GaAs
with two Schottky contacts on the top. The capacitance–voltage
(C–V ) measurements show a Cmax/Cmin ratio up to 113 and
an extremely high nonlinearity during the transition from high
to low capacitance with sensitivity of up to 35. These results are
one of the best obtained so far among similar structure devices. In
addition, optoelectronic experimental results demonstrate that the
slope of the C–V relationship can be modulated by the intensity
of the incident optical power. A model describing the source of
the reported C–V results is proposed along with the simulation
results verifying the observed C–V behavior. |
| URI: | http://hdl.handle.net/1860/1139 |
| Appears in Collections: | Faculty Research and Publications (ECE)
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