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Supporting information for: "Diamond-hexagonal semiconductor nanocones with controllable apex angle"
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|Title: ||Supporting information for: "Diamond-hexagonal semiconductor nanocones with controllable apex angle"|
|Authors: ||Spanier, Jonathan E.|
|Keywords: ||Nanostructured Materials;Polycrystalline Silicon;Nitride Nanocones;Nanowires;Growth;Arrays|
|Issue Date: ||2006|
|Publisher: ||American Chemical Society|
|Citation: ||Journal Of The American Chemical Society, 127(40): pp. 13782-13783. http://dx.doi.org/10.1021/ja0544814|
|Abstract: ||We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.|
|Appears in Collections:||Faculty Research and Publications (MSE)|
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