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GaN nanoindentation: a micro-Raman spectroscopy study of local strain fields
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1860/1237
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| Title: | GaN nanoindentation: a micro-Raman spectroscopy study of local strain fields |
| Authors: | Puech, Pascal Demangeot, François Frandon, Jean Pinquier, Claire Kuball, Martin Domnich, Vladislav Gogotsi, Yury G. |
| Keywords: | Films Layers |
| Issue Date: | 1-Sep-2004 |
| Publisher: | American Institute of Physics |
| Citation: | Journal of Applied Physics, 96(5): pp. 2853-2856. Retrieved September 19, 2006 from http://nano.materials.drexel.edu/Papers/GaNNanoRaman.pdf. DOI: http://dx.doi.org/10.1063/1.1775295 |
| Abstract: | We have investigated strain fields around GaN nanoindentations. Stress relaxation around the edges
of the nanoindentation was evident in atomic force microscopy images. More detailed information
on the strain fields was obtained from Raman scattering, which has been used to analyze the shape
of the strain field around the indentation. We find that the Berkovich tip giving a triangular imprint
on the sample generates a strain field, which represents a hexagonal pattern. Negative values of the
strain indicate that the residual stress is compressive. Strain is larger in the center of the indentation
than outside. Analysis of the ratio of the frequency shift of the E2 and A1sLOd modes suggests that
the residual strains are close to biaxial state outside the indentation contact zone, and mostly
hydrostatic within the indentation center. |
| URI: | http://hdl.handle.net/1860/1237 |
| Appears in Collections: | Faculty Research and Publications (MSE)
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