iDEA: Drexel E-repository and Archives >
Drexel Academic Community >
College of Engineering >
Department of Materials Science and Engineering >
Faculty Research and Publications (MSE) >
Optical and electrical properties of Zn1-xBexSe grown by molecular beam epitaxy
Please use this identifier to cite or link to this item:
|Title: ||Optical and electrical properties of Zn1-xBexSe grown by molecular beam epitaxy|
|Authors: ||Kuskovsky, I. L.|
Spanier, Jonathan E.
Herman, I. P.
Neumark, G. F.
Tamargo, M. C.
Smyntyna, V. A.
Belous, V. M.
Pasternak, V. A.
|Keywords: ||Molecular Beam Epitaxy|
|Issue Date: ||2004 |
|Citation: ||Journal of Physical Studies, 8(4): pp. 384–388. Retrieved September 19, 2006 from http://www.ece.drexel.edu/mml/pubs/jps_paper.pdf|
|Abstract: ||The dopant behaviour in the n-type ZnBeSe:Cl and p-type ZnBeSe:N grown by Molecular
Beam Epitaxy (MBE) is investigated. All the samples have been grown on (001) GaAs substrates
(conducting or semi-insulating). For the experimental investigation the photoluminescence (PL),
Raman Scattering, photoconductivity and I–V measurements are used.
From the temperature (9 K–300 K) and exitation intensity dependent on PL measurements it
will be shown that donor and acceptor impurities exhibit a somewhat different behaviour and/or
properties from those in ZnSe. We argue that
(i) the activation energy of both the N acceptor and Cl donor increases in ZnBeSe as concentration
of Be increases;
(ii) all the indoped and n-type samples exhibit high (>180 K) temperature PL associated with
shallow impurity of acceptor type, which also show an increase in the binding energy with Be
Raman scattering experiments have shown that at low Be concentrations (x < 0.04) one can use
LO photon energy in ZnSe in the analyses of PL spectra from ZnBeSe.
From photoconductivity and I–V measurements we show that
(i) there are a number of carrier traps in ZnBeSe:Cl;
(ii) some of the ZnBeSe samples with Be concentrations over 1% exhibit photoconductivity
behaviour associated with the presence of DX centres or other deep trap, i. e., we observe persistent
(iii) volt-ampere dependencies (with and without irradiation) are different for the samples grown
on conducting and semi-insulating substrates.|
|Appears in Collections:||Faculty Research and Publications (MSE)|
Items in iDEA are protected by copyright, with all rights reserved, unless otherwise indicated.