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Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy
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|Title: ||Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy|
|Authors: ||Narayanan, S.|
Kalidindi, Surya R.
Schadler, Linda S.
|Issue Date: ||1-Sep-1997 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of Applied Physics, 82 (5): pp. 2595-2602.|
|Abstract: ||A new technique was developed to predict the unknown in-plane stress state and the magnitude of
the stress components in (111) silicon wafers using micro-Raman spectroscopy. The approach is
based on analyzing the combined signal from the initially degenerate peaks of the F2g mode in
silicon as a function of the angle between the incident laser polarization and the polarization selected
from the scattered beam using an analyzer. The peak position of the combined signal when plotted
as a function of the angle was found to contain the information required to estimate the magnitude
of the individual stress components in the plane-stress condition. The development of this technique
is described in this paper for (111) silicon wafers.|
|Appears in Collections:||Faculty Research and Publications (MSE)|
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